TY - JOUR AU - Hoa, Nguyen Duc AU - Dang, Ngoc Son AU - Dang, Thi Thanh Le AU - Nguyen, Thi Thu Hoa AU - Chu, Manh Hung AU - Nguyen, Van Duy PY - 2021/04/24 Y2 - 2024/03/29 TI - Effect of bias voltage and carrier gas on the hydrogen gas-sensing properties of tungsten oxide nanobeads JF - Communications in Physics JA - Comm. Phys. VL - 31 IS - 3 SE - Papers DO - 10.15625/0868-3166/15809 UR - https://vjst.net/index.php/cip/article/view/15809 SP - 321 AB - <p>We investigated the effect of bias voltage and carrier gas on the hydrogen sensing performance of tungsten oxide nanobeads. The tungsten oxide nanobeads were prepared by a template-assisted method followed by calcination. The porous single walled carbon nanotube thin film was used as sacrificed template for the deposition of tungsten, followed by thermal calcination at high temperature to oxidize W into WO<sub>3</sub> and to burn out the template. The crystal structures and morphology of the synthesized materials were characterized by X-ray diffraction, field-emission scanning electron microscopy, high-resolution transmission electron microscopy and Raman spectra. Hydrogen gas sensing properties were tested in air and in N<sub>2</sub> as refence for comparison.  Our results indicated that Schottky junction was formed at the interface of WO<sub>3</sub> and Pt electrodes. The sensor operated under revered bias voltage processed excellent hydrogen sensing performance. In addition, the H<sub>2</sub> sensing performance of the WO<sub>3</sub> nanobeads is higher when measured in N<sub>2</sub> gas as reference.</p> ER -